BC817-25 Просмотр технического описания (PDF) - Philips Electronics
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BC817-25 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
BC817
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BC807.
MARKING
TYPE
NUMBER
BC817
BC817-16
MARKING
CODE(1)
6D∗
6A∗
TYPE
NUMBER
BC817-25
BC817-40
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE(1)
6B∗
6C∗
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base; IC = 10 mA
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
45
5
500
1
200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Jun 01
2
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