BC807-16(2003) Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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Компоненты Описание

производитель

BC807-16
(Rev.:2003)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

BC 807 / BC 808

Characteristics, Tj = 25/C

Collector saturation voltage – Kollektor-Sättigungsspg.

- IC = 500 mA, - IB = 50 mA

- VCEsat

Base saturation voltage – Basis-Sättigungsspannung

- IC = 500 mA, - IB = 50 mA

- VBEsat

Base-Emitter voltage – Basis-Emitter-Spannung

- VCE = 1 V, - IC = 500 mA

- VBE

Collector-Base cutoff current – Kollektorreststrom

IE = 0, - VCB = 20 V

IE = 0, - VCB = 20 V, Tj = 150/C

Emitter-Base cutoff current – Emitterreststrom

- ICB0

- ICB0

IC = 0, - VEB = 4 V

Gain-Bandwidth Product – Transitfrequenz

- IEB0

- VCE = 5 V, - IC = 10 mA, f = 50 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Min.

Kennwerte, Tj = 25/C

Typ.

Max.

–

–

0.7 V

–

–

1.3 V

–

–

1.2 V

–

–

100 nA

–

–

5 :A

–

–

100 nA

80 MHz 100 MHz

–

–

12 pF

–

RthA

320 K/W 1)

BC 817 / BC 818

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 807-16 = 5A BC 807-25 = 5B BC 807-40 = 5C

BC 807 = 5D

BC 808-16 = 5E BC 808-25 = 5F BC 808-40 = 5G

BC 808 = 5H

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

3

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