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BB181(2008) Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге
Компоненты Описание
производитель
BB181
(Rev.:2008)
NXP
NXP Semiconductors. NXP
BB181 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
Product specification
 VHF variable capacitance diode
FEATURES
Excellent linearity
Ultra small plastic SMD package
DESCRIPTION
The BB181 is a variable capacitance
diode, fabricated in planar technology
and encapsulated in the SOD523
handboo1k, 2 columns
2
BB181
C28: 1 pF; ratio: 14.
(SC-79) ultra small plastic SMD
MBK441
package.
APPLICATIONS
Electronic tuning in satellite tuners
PINNING
Marking code: N.
Orientation of marking code as shown.
Cathode side indicated by a bar.
Tuneable coupling
Voltage controlled oscillators
(VCO).
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN. MAX. UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150 °C
Tj
operating junction temperature 55
+150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
C-C----d-d---((--02--.-85---VV---))-
capacitance ratio
CONDITIONS
VR = 30 V; see Fig.3
VR = 30 V; Tj = 85 °C; see Fig.3
f = 470 MHz; note 1
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
Note
1. VR is the value at which Cd = 9 pF.
MIN.
8
0.7
12
MAX.
10
200
3
17
1.055
16
UNIT
nA
nA
pF
pF
Rev. 02 - 2 January 2008
2 of 6

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