BAY80-TAP(2007) Просмотр технического описания (PDF) - Vishay Semiconductors
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BAY80-TAP Datasheet PDF : 5 Pages
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BAY80
Vishay Semiconductors
Small Signal Switching Diode, High Voltage
Features
• Silicon Epitaxial Planar Diode
• Lead (Pb)-free component
e2
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
Applications
• General purpose
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAY80
Ordering code
BAY80-TR or BAY80-TAP
Type Marking
BAY80
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
Average forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air l = 4 mm, TL = constant
Junction to ambient air
Storage temperature range
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
Symbol
RthJA
Tj
Tstg
94 9367
Remarks
Tape and Reel/Ammopack
Value
Unit
150
V
120
V
1
A
625
mA
250
mA
200
mA
Value
Unit
350
K/W
+ 175
°C
- 65 to + 175
°C
Document Number 85553
Rev. 1.8, 19-Feb-07
www.vishay.com
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