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BAW56T Просмотр технического описания (PDF) - KEC
Номер в каталоге
Компоненты Описание
производитель
BAW56T
SILICON EPITAXIAL TYPE DIODE
KEC
BAW56T Datasheet PDF : 2 Pages
1
2
BAW56T
10
3
10
2
10
1
10
0
10
-1
10
-2
0
I
F
- V
F
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE V
F
(V)
I
R
- V
R
10
1
10
0
Ta=100 C
10
-1
Ta=75 C
Ta=50 C
10
-2
Ta=25 C
10
-3
0
20
40
60
80
REVERSE VOLTAGE V
R
(V)
2.5
2.0
1.5
1.0
0.5
0
0.2
C
T
- V
R
f=1MHz
Ta=25 C
1
10
100
REVERSE VOLTAGE V
R
(R)
trr - I
F
100
Ta=25 C
Fig. 1
10
1
0.1
1
10
100
FORWARD CURRENT I
F
(mA)
Fig. 1. REVERSE RECOVERY TIME(trr) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT
0.01
µ
F
DUT
-6V
50ns
E
OUTPUT
SAMPLING
OSCILLOSCOPE
(R
IN
=50
Ω
)
I
F
=10mA
0
I
R
PULSE GENERATOR
(R
OUT
=50
Ω
)
WAVEFORM
0.1 I
R
trr
2009. 1. 23
Revision No : 1
2/2
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