BAW56T Просмотр технического описания (PDF) - KEC
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BAW56T Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
·Small Package
: ESM.
·Low Forward Voltage
: VF=0.92V (Typ.).
·Fast Reverse Recovery Time : trr=1.6ns(Typ.).
·Small Total Capacitance : CT=2.2pF (Typ.).
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR
80
Continuous Forward Current
IF
150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD
200 *
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
UNIT
V
V
mA
A
mW
℃
℃
BAW56T
SILICON EPITAXIAL TYPE DIODE
E
B
2
1
3
DIM MILLIMETERS
A
1.60+_ 0.10
D
B
0.85+_ 0.10
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. CATHODE 1
2. CATHODE 2
3. ANODE
3
2
1
ESM
Marking
H1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
VF(1)
VF(2)
VF(3)
IR
CT
Reverse Recovery Time
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
-
-
-
-
MAX.
-
-
1.25
0.5
4.0
4.0
UNIT
V
μA
pF
ns
2009. 1. 23
Revision No : 1
1/2
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