BAW56S Просмотр технического описания (PDF) - Siemens AG

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производитель

BAW56S

Silicon Switching Diode Array

Siemens AG 

BAW 56S

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

V(BR)

VF

70

-

-V

mV

-

- 715

-

- 855

-

- 1000

-

- 1250

Reverse current

VR = 70 V

Reverse current

VR = 25 V, TA = 150 °C

VR = 70 V, TA = 150 °C

IR

-

-

2.5 µA

IR

nA

-

-

30

-

-

50

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω,

measured at IR = 1mA

CD

-

-

1.5 pF

trr

-

-

6 ns

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

EHN00019

Pulse generator: tp = 100ns, D = 0.05,

tr = 0.6ns, Ri = 50Ω

Oscillograph: R = 50Ω, tr = 0.35ns,

C ≤ 1pF

SSeemmicioconndduuctcotor rGGrorouupp

22

Sep-109798-1-1919-081

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