BAV70-E3-18 Просмотр технического описания (PDF) - Vishay Semiconductors
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BAV70-E3-18 Datasheet PDF : 4 Pages
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www.vishay.com
BAV70
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
VF
IF = 10 mA
VF
IF = 50 mA
VF
IF = 150 mA
VF
VR = 70 V
IR
VR = 70 V, Tj = 150 °C
IR
VR = 25 V, Tj = 150 °C
IR
VR = 0 V, f = 1 MHz
CD
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100
trr
MAX.
0.715
0.855
1
1.25
2500
50
30
1.5
6
UNIT
V
V
V
V
nA
μA
μA
pF
ns
TYPICAL CHARACTERISICS (Tamb = 25 °C, unless otherwise specified)
1000
102
100
Tj = 100 °C
10
1
25 °C
101
/
FM
100
D = 0.005
0.01
0.02
0.05
0.1
0.2
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
10-1
10-2
10-6
22290
10-5
D=
tp
T
10-4 10-3
tp
T
10-2
10-1 s 10-0
t
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Peak forward current/FM = f (tp)
Rev. 2.2, 13-Feb-18
2
Document Number: 85546
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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