BAV70-E3-08 Просмотр технического описания (PDF) - Vishay Semiconductors
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BAV70-E3-08 Datasheet PDF : 4 Pages
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www.vishay.com
BAV70
Vishay Semiconductors
Small Signal Switching Diode, Dual
3
1
2
18108
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common
cathode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV70
ORDERING CODE
BAV70-E3-08 or BAV70-E3-18
BAV70-HE3-08 or BAV70-HE3-18
CIRCUIT CONFIGURATION
Common cathode
TYPE MARKING
JJ
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Peak reverse voltage
Reverse voltage
Forward current (continuous)
Non repetitive peak forward current
Power dissipation (1)
tp = 1 μs
tp = 1 ms
tp = 1 s
VRRM
VR
IF
IFSM
IFSM
IFSM
Ptot
Note
(1) Device on fiberglass substrate
VALUE
70
70
250
2
1
0.5
350
UNIT
V
V
mA
A
A
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Device on fiberglass substrate
VALUE
430
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 2.2, 13-Feb-18
1
Document Number: 85546
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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