BAV20 Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

BAV20

SIGNAL DIODE

Willas Electronic Corp. 

WILLAS

BAV20

BAV20 SIGNAL DIODE

Absolute Maximum Ratings (Ta=25°C)

Items

Symbol Ratings Unit

Reverse Voltag VRRM 200

V

Reverse Recovery tr

50

ns

Time

Power Dissipation

P

500 mW

3.33mW/°C (25°C)

Forward Current

IF

250 mA

Junction Temp.

Tj -65 to 175 °C

Storage Temp.

Tstg -65 to 175 °C

Mechanical Data

Items

Materials

Package

DO-35

Case

Hermetically sealed glass

Lead/Finish Double stud/Solder Plating

Chip

Glass Passivated

Dimensions (DO-35)

1.02(26.0)

MIN.

.022(0.55)

.018(0.45)

.153(3.6)

.132(3.0)

1.02(26.0)

MIN.

.087(2.2)

.067(1.7)

Dimensions in millimeters

Electrical Characteristics (Ta=25°C)

Ratings

Breakdown Voltage

IR= 100uA

Peak Forward Surge Current PW= 1sec.

Maximum Forward Voltage

IF= 100mA

Maximum Reverse Current

VR=1 50V

VR=150V,Tj= 100°C

Maximum Junction Capacitance

VR= 0, f= 1 MHz

Max Reverse Recovery Time

IF=IR= 30mA, VR= 6V, iR= 3mA,RL= 100Ω

Symbol

Ratings

Unit

BV

V

200

IFsurge

1.0

A

VF

V

1.0

IR

uA

0.10

15

Cj

pF

1.5

trr

ns

50

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