Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Diodes
BAV199LT1 SWITCHING DIODE
FEATURES
Power dissipation
PD:
225 mW (Tamb=25℃)
Forward Current
IF:
Reverse Voltage
215 mA
VR:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-23
2. 4
1. 3
Unit: mm
Mar ki ng JY
Mar ki ng JY
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
70
5
UNIT
V
nA
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V, f=1MHz
t rr
900
1000
mV
1100
1250
2
pF
3
µS