BAV102 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAV102 Datasheet PDF : 10 Pages
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NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
600
IF
(mA)
400
200
mbg459
(1)
(2)
(3)
102
IFSM
(A)
10
1
mbg703
0
0
1
VF (V)
2
(1) Tamb = 150 °C; typical values
(2) Tamb = 25 °C; typical values
(3) Tamb = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
103
IR
(µA)
102
mgd009
10
1
10−1
10−2
0
100
Tj (°C)
200
VR = VRmax
Solid line: maximum values
Dotted line: typical values
Fig 3. Reverse current as a function of junction
temperature
10−1
1
10
102
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
1.6
Cd
(pF)
1.4
mgd005
1.2
1.0
0.8
0
10
f = 1 MHz; Tamb = 25 °C
VR (V)
20
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV102_BAV103_3
Product data sheet
Rev. 03 — 16 August 2007
© NXP B.V. 2007. All rights reserved.
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