BAV102 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BAV102 Datasheet PDF : 10 Pages
| |||
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IFSM
non-repetitive peak
square wave
[3]
forward current
tp = 1 µs
-
tp = 100 µs
-
tp = 1 s
-
Ptot
total power dissipation Tamb ≤ 25 °C
[2] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max
9
3
1
400
175
+175
+175
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Tj = 25 °C prior to surge.
Unit
A
A
A
mW
°C
°C
°C
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Rth(j-t)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
thermal resistance from
junction to tie-point
Min Typ Max Unit
[1] -
-
375 K/W
-
-
300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 100 mA
IF = 200 mA
IR
reverse current
BAV102
VR = 150 V
VR = 150 V; Tj = 150 °C
BAV103
VR = 200 V
VR = 200 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
Min Typ
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[2] -
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
Max Unit
1.0 V
1.25 V
100 nA
100 µA
100 nA
100 µA
5
pF
50 ns
BAV102_BAV103_3
Product data sheet
Rev. 03 — 16 August 2007
© NXP B.V. 2007. All rights reserved.
3 of 10
Share Link: 