Q62702-A3469 Просмотр технического описания (PDF) - Siemens AG

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Q62702-A3469

Silicon Schottky Diode Array

Siemens AG 

BAS 70-06S

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Breakdown voltage

I(BR) = 10 µA

Reverse current

VR = 50 V

VR = 70 V

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 15 mA

V(BR)

IR

VF

70

-

-V

µA

-

-

0.1

-

-

10

mV

300 375 410

600 705 750

750 880 1000

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Charge carrier life time

IF = 25 mA

Differential forward resistance

IF = 10 mA, f = 100 MHz

CT

-

1.6

2 pF

τ

-

- 100 ps

rf

-

30

-Ω

SSeemmicioconndduuctcotor rGGrorouupp

22

Sep-109798-1-1919-081

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