BAS55 Просмотр технического описания (PDF) - TY Semiconductor

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производитель

BAS55

High-speed diode

TY Semiconductor 

Product specification

BAS55

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Max

Unit

Forward voltage

VF

IF = 200 mA;DC value; Note 1

1.0

V

Reverse current

VR = 60 V;

IR

VR = 60 V; Tj = 150

100

nA

100

A

Diode capacitance

Cd

f = 1 MHz; VR = 0;

2.5

pF

Reverse recovery time

when switched from IF = 400 mA to IR = 400 mA;

trr

6

ns

RL = 100 ;measured at IR = 40 mA;

Forward recovery voltage

when switched to IF = 400 mA;tr = 30 ns;

2

Vf r

V

when switched to IF = 400 mA;tr = 100 ns;

1.5

Note

1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.

Marking

Marking

L5p

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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