BAS29 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BAS29

General purpose controlled avalanche (double) diodes

Philips Electronics 

Philips Semiconductors

General purpose controlled avalanche

(double) diodes

Product specification

BAS29; BAS31; BAS35

102

handbook, halfpage

IR

(µA)

10

1

(1)

(2)

MBH282

10−1

10−2

0

100

Tj (oC)

200

(1) VR = 90 V; maximum values.

(2) VR = 90 V; typical values.

Fig.5 Reverse current as a function of

junction temperature.

handbook,4h0alfpage

Cd

(pF)

30

MGD003

20

10

0

0

10

20

30

VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

RS = 50 Ω

V = VR IF x R S

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

R i = 50 Ω

VR

MGA881

tr

tp

10%

90%

input signal

t

IF

t rr

t

(1)

output signal

(1) IR = 3 mA.

1999 May 21

Fig.7 Reverse recovery voltage test circuit and waveforms.

6

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