BAS316 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

BAS316

Silicon Epitaxial Planar Diode

Galaxy Semi-Conductor 

Silicon Epitaxial Planar Diode

FEATURES

 Very small plastic SMD package

 High switching speed:max.4ns

Pb

Lead-free

 Continuous reverse voltage:max.100v

 Repetitive peak reverse voltage:max.100v

 Repetitive peak forward current:max.500mA

APPLICATIONS

 Surface mount fast switching diode

Production specification

BAS316

SOD-323

ORDERING INFORMATION

Type No.

Marking

BAS316

A6

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Repetitive peak reverse voltage

Continuous Reverse Voltage

Continuous forward Current

Repetitive peak forward current

Non-Repetitive peak forward current

Power Dissipation, Ts≤90℃

t=1μs

t=1ms

t=1s

Junction and Storage Temperature Rage

Thermal resistance from junction to solder point

Thermal resistance from junction to ambient

Thermal resistance from junction to case

VRRM

VR

IF

IFRM

IFSM

Pd

Tj,TSTG

Rthj-s

Rthj-A

Rthj-c

Value

100

100

250

500

4

1

0.5

400

-65 to +150

150

500

210

Unit

V

V

mA

mA

A

mW

℃

℃/W

℃/W

℃/W

B013

Rev.B

www.gmesemi.com

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