BAS16HT1 Просмотр технического описания (PDF) - E-Tech Electronics LTD
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BAS16HT1 Datasheet PDF : 2 Pages
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Switching Diode
1
CATHODE
2
ANODE
BAS16HT1
1
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
75
200
500
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
PD
R θJA
T J , T stg
Max
200
1.57
635
150
DEVICE MARKING
BAS16HT1 = A6
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75 Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
Symbol
IR
V (BR)
VF
CD
V FR
t rr
QS
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
°C
Min
—
—
—
75
—
—
—
—
—
—
—
—
2
CASE 477– 02, STYLE 1
SOD– 323
Max
1.0
50
30
—
Unit
µAdc
Vdc
mV
715
855
1000
1250
2.0
pF
1.75
Vdc
6.0
ns
45
pC
S7–1/2
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