BAS16 Просмотр технического описания (PDF) - General Semiconductor

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BAS16

Small Signal Diodes

General Semiconductor 

BAS16

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

Leakage Current

at VR = 25 V, Tj = 150 °C

at VR = 75 V

at VR = 75 V, Tj = 150 °C

VF

–

–

VF

–

–

VF

–

–

VF

–

–

IR

–

–

IR

–

–

IR

–

–

Capacitance

at VR = 0; f = 1 MHz

Ctot

–

–

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA

IR = 1 mA, RL = 100 Ω

trr

–

–

Thermal Resistance

Junction to Ambient Air

BAS16 RthJA

–

–

1) Device on fiberglass substrate, see layout (SOT-23).

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Max.

Unit

715

mV

855

mV

1000

mV

1250

mV

30

µA

1

µA

50

µA

2

pF

6

ns

4301)

K/W

K/W

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