BAP50-02(2008) Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP50-02 Datasheet PDF : 7 Pages
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NXP Semiconductors
General purpose PIN diode
Product specification
BAP50-02
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
|s21|2
isolation
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
τL
charge carrier life time
LS
series inductance
CONDITIONS
MIN.
IF = 50 mA
−
IR = 10 µA
50
VR = 50 V
−
VR = 0; f = 1 MHz
−
VR = 1 V; f = 1 MHz
−
VR = 5 V; f = 1 MHz
−
IF = 0.5 mA; f = 100 MHz; note 1 −
IF = 1 mA; f = 100 MHz; note 1 −
IF = 10 mA; f = 100 MHz; note 1 −
VR = 0; f = 900 MHz
−
VR = 0; f = 1800 MHz
−
VR = 0; f = 2450 MHz
−
IF = 0.5 mA; f = 900 MHz
−
IF = 0.5 mA; f = 1800 MHz
−
IF = 0.5 mA; f = 2450 MHz
−
IF = 1 mA; f = 900 MHz
−
IF = 1 mA; f = 1800 MHz
−
IF = 1 mA; f = 2450 MHz
−
IF = 10 mA; f = 900 MHz
−
IF = 10 mA; f = 1800 MHz
−
IF = 10 mA; f = 2450 MHz
−
when switched from IF = 10 mA to −
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
−
TYP.
0.95
−
−
0.4
0.3
0.22
25
14
3
20.4
17.3
15.5
1.74
1.79
1.88
1.03
1.09
1.15
0.26
0.32
0.34
1.05
0.6
MAX. UNIT
1.1 V
−
V
100 nA
−
pF
0.55 pF
0.35 pF
40
Ω
25
Ω
5
Ω
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
µs
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 02 - 3 January 2008
3 of 7
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