NES2527B-30 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NES2527B-30

30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

NES2527B-30

TYPICAL CHARACTERISTICS (TA = 25 °C)

OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER

80

POUT

15.0

45

70

60

10.0

50

40

EFF

40

ID

30

5.0

35

TEST CONDITIONS

Freq = 2.5 (GHz)

VDS = 10.0 (V)

IDS = 6.0 (A)

Rg = 0 (Ω)

25

30

35

Pin - Input Power - dBm

OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER

80

POUT

15.0

45

70

60

10.0

50

40

EFF

40

ID

30

5.0

35

TEST CONDITIONS

Freq = 2.7 (GHz)

VDS = 10.0 (V)

IDS = 6.0 (A)

Rg = 0 (Ω)

25

30

35

Pin - Input Power - dBm

3

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