AS28C010 Просмотр технического описания (PDF) - Austin Semiconductor

Номер в каталоге

Компоненты Описание

производитель

AS28C010

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS28C010

CAPACITANCE TA=+25oC, f= 1MHZ, VCC=5V

PARAMETER

SYMBOL

MAX

Input Capacitance

CIN(2)

10

Input / Output Capactiance

CI/O(2)

10

UNITS

pF

pF

Test Conditions

VIN=0V

VI/O=0V

POWER-UP TIMING

Symbol

tPUR (2)

tPUW (2)

Parameter

Power-up to Read Operation

Power-up to Write Operation

Max.

100

5

Units

Ps

ms

ENDURANCE AND DATA RETENTION

Parameter

Endurance

Endurance

Data Retention

Min.

10,000

100,000

100

Max.

Units

Cycles Per Byte

Cycles Per Page

Years

A.C. CONDITIONS OF TEST

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Levels

0V to 3V

10ns

1.5V

EQUIVALENT A.C. LOAD CURRENT

MODE SELECTION

MODE

CE\

OE\

READ

VIL

VIL

STANDBY

VIH

X

WRITE

VIL

VIH

DESELECT

VIL

VIH

WRITE

INHIBIT

X

X

X

VIL

DATA

POLLING

VIL

VIL

SYMBOL TABLE

WE\

VIH

X

VIL

VIH

VIH

X

VIH

I/O

DOUT

High-Z

DIN

High-Z

---

---

Data Out

(I/O7)

Notes: (2) This parameter is periodically sampled and not 100% tested.

AS28C010

Rev. 1.5 5/06

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

5

Share Link: