APT8014JFLL Просмотр технического описания (PDF) - Microsemi Corporation
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APT8014JFLL Datasheet PDF : 5 Pages
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168
100
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 52A
10mS
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0 50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
160
td(off)
140
120
100
80
VDD = 533V
RG = 3Ω
TJ = 125°C
L = 100µH
60
40
20
td(on)
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
2500
2000
VDD = 533V
RG = 3Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
1500
1000
500
Eon
Eoff
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
APT8014JFLL
Ciss
1,000
Coss
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
10
TJ =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
VDD = 533V
120 RG = 3Ω
TJ = 125°C
L = 100µH
100
tf
80
60
40
20
tr
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12000
VDD = 533V
ID = 52A
10000 TJ = 125°C
Eoff
L = 100µH
EON includes
8000 diode reverse recovery.
6000
4000
Eon
2000
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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