APT8011JFLL Просмотр технического описания (PDF) - Microsemi Corporation
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APT8011JFLL Datasheet PDF : 5 Pages
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204
100
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 51A
10mS
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0 100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
350
300
250
200
150
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
td(off)
100
50
td(on)
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
4000
3500
3000
2500
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
500
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
APT8011JFLL
Ciss
1,000
Coss
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
10
TJ =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
VDD = 533V
RG = 5Ω
100 TJ = 125°C
L = 100µH
tf
80
60
40
20
tr
0
10 20 30 40 50 60 70 80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
14,000
VDD = 533V
12,000 ID = 51A
TJ = 125°C
L = 100µH
Eoff
10,000 EON includes
diode reverse recovery.
8,000
6,000
4,000
Eon
2,000
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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