APT6013JFLL Просмотр технического описания (PDF) - Advanced Power Technology

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APT6013JFLL

POWER MOS 7® FREDFET

Advanced Power Technology  

DYNAMIC CHARACTERISTICS

APT6013JFLL

Symbol Characteristic

Test Conditions

MIN TYP MAX UNIT

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

5630

1060

pF

70

Qg

Total Gate Charge 3

Qgs Gate-Source Charge

Qgd Gate-Drain ("Miller ") Charge

VGS = 10V

VDD = 300V

ID = 39A @ 25°C

130

25

nC

40

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

RESISTIVE SWITCHING

11

VGS = 15V

VDD = 300V

ID = 39A @ 25°C

13

ns

27

RG = 0.6Ω

9

INDUCTIVE SWITCHING @ 25°C

VDD = 400V, VGS = 15V

575

ID = 39A, RG = 5Ω

530

µJ

INDUCTIVE SWITCHING @ 125°C

VDD = 400V, VGS = 15V

935

ID = 39A, RG = 5Ω

630

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current 1 (Body Diode)

39 Amps

156

VSD Diode Forward Voltage 2 (VGS = 0V, IS = -39A)

1.3 Volts

dv/dt Peak Diode Recovery dv/dt 5

15 V/ns

Reverse Recovery Time

trr

(IS = -39A, di/dt = 100A/µs)

Reverse Recovery Charge

Qrr

(IS = -39A, di/dt = 100A/µs)

Peak Recovery Current

IRRM

(IS = -39A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

250

ns

500

2.27

µC

6.87

14

Amps

22

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN TYP MAX UNIT

RθJC

RθJA

Junction to Case

Junction to Ambient

0.27

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 3.29mH, RG = 25Ω, Peak IL = 39A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ -ID39A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

0.30

0.25

0.9

0.20

0.7

0.15

0.10

0.05

0

10-5

0.5

Note:

0.3

t1

0.1

0.05

SINGLE PULSE

t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

10-4

10-3

10-2

10-1

1

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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