APT6011B2VFR Просмотр технического описания (PDF) - Advanced Power Technology
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APT6011B2VFR Datasheet PDF : 4 Pages
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DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 49A @ 25°C
VGS = 15V
VDD = 300V
ID = 49A @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -49A)
dv/dt Peak Diode Recovery dv/dt 5
Reverse Recovery Time
trr
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT6011B2VFR_LVFR
MIN TYP MAX UNIT
8900
1100
pF
500
450
50
nC
200
17
16
ns
65
6
MIN TYP MAX UNIT
49 Amps
196
1.3 Volts
15 V/ns
300
ns
600
2.0
µC
7.0
15
Amps
27
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.20
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.50mH, RG = 25Ω, Peak IL = 49A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID49A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.05
0
10-5
Note:
0.5
t1
0.3
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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