APT6010JFLL Просмотр технического описания (PDF) - Microsemi Corporation
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APT6010JFLL Datasheet PDF : 5 Pages
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 47A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 47A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V VGS = 15V
ID = 47A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -47A)
dv/dt Peak Diode Recovery dv/dt 5
Reverse Recovery Time
trr
(IS = -47A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -47A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -47A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
VIsolation
Junction to Case
RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
MIN
MIN
MIN
2500
TYP
6710
1250
90
150
30
75
12
17
34
10
770
845
1000
1060
TYP
2.0
6.8
15
27
TYP
APT6010JFLL
MAX UNIT
pF
nC
ns
µJ
MAX
47
188
1.3
15
300
600
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MAX
0.24
UNIT
°C/W
Volts
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
D = 0.9
0.20
0.7
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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