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AOT11N60 Просмотр технического описания (PDF) - Unspecified

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производитель
AOT11N60
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AOT11N60 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
600
700
0.67
V
V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
0.56 0.65
12
S
0.73 1
V
11
A
39
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1320 1656 1990 pF
100 146 195 pF
6.5 11.2 16 pF
1.7 3.5 5.3
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=11A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=11A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
24 30.6 37 nC
9.6
nC
9.6
nC
39
ns
58
ns
92
ns
42
ns
400 500 600 ns
4.7
5.9 7.1
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25, Starting TJ=25°C
2/6
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