ADUM1100AR(RevE) Просмотр технического описания (PDF) - Analog Devices
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ADUM1100AR Datasheet PDF : 16 Pages
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ADuM1100
ELECTRICAL
SPECIFICATIONS,
3.3
V
OPERATION1
(3.0 V ≤ VDD1 ≤ 3.6 V, 3.0 V ≤ VDD2 ≤ 3.6 V. All min/max
specifications apply over the entire recommended operation
range, unless otherwise noted. All typical specifications are at TA = 25؇C, VDD1 = VDD2 = 3.3 V.)
Parameter
Symbol Min
Typ Max Unit Test Conditions
DC SPECIFICATIONS
Input Supply Current
Output Supply Current
Input Supply Current (25 Mbps)
(See TPC 1)
Output Supply Current2 (25 Mbps)
(See TPC 2)
Input Supply Current (50 Mbps)
(See TPC 1)
Output Supply Current2 (50 Mbps)
(See TPC 2)
Input Current
Logic High Output Voltage
Logic Low Output Voltage
IDD1(Q)
IDD2(Q)
IDD1(25)
IDD2(25)
IDD1(50)
IDD2(50)
II
VOH
VOL
SWITCHING SPECIFICATIONS
For ADuM1100AR
Minimum Pulse Width3
Maximum Data Rate4
For ADuM1100BR/ADuM1100UR
Minimum Pulse Width3
Maximum Data Rate4
For All Grades
Propagation Delay Time to
Logic Low Output5, 6
(See TPC 4)
Propagation Delay Time to
Logic High Output5, 6
(See TPC 4)
Pulse Width Distortion |tPLH – tPHL|6
Change versus Temperature7
Propagation Delay Skew
(Equal Temperature)6, 8
Propagation Delay Skew
(Equal Temperature, Supplies)6, 8
Output Rise/Fall Time
Common-Mode Transient Immunity
at Logic Low/High Output9
Input Dynamic Power Dissipation
Capacitance10
Output Dynamic Power Dissipation
Capacitance10
PW
PW
tPHL
tPLH
PWD
tPSK1
tPSK2
tR, tF
|CML|,
|CMH|
CPD1
CPD2
0.1 0.3
0.005 0.04
2.0 2.8
0.3 0.7
4.0 6.0
1.2 1.6
–10
+0.01 +10
VDD2 – 0.1 3.3
VDD2 – 0.5 3.0
0.0 0.1
0.04 0.1
0.3 0.4
40
25
10 20
50
100
14.5 28
15.0 28
0.5 3
10
15
12
3
25
35
47
14
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
ns
Mbps
ns
Mbps
ns
ns
ns
ps/°C
ns
ns
ns
kV/µs
pF
pF
VI = 0 V or VDD1
VI = 0 V or VDD1
12.5 MHz Logic Signal Frequency
12.5 MHz Logic Signal Frequency
25 MHz Logic Signal Frequency,
ADuM1100BR/ADuM1100UR Only
25 MHz Logic Signal Frequency,
ADuM1100BR/ADuM1100UR Only
0 ≤ VIN ≤ VDD1
IO = –20 µA, VI = VIH
IO = –2.5 mA, VI = VIH
IO = 20 µA, VI = VIL
IO = 400 µA, VI = VIL
IO = 2.5 mA, VI = VIL
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
CL = 15 pF, CMOS Signal Levels
VI = 0 or VDD1, VCM = 1000 V,
Transient Magnitude = 800 V
See Notes on page 5.
Specifications subject to change without notice.
REV. E
–3–
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