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ACT108-600E Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание
производитель
ACT108-600E
NXP
NXP Semiconductors. NXP
ACT108-600E Datasheet PDF : 12 Pages
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NXP Semiconductors
12
A
B
8
4
003aac814
2.0
A [B]
A [spec]
1.5
1.0
0.5
ACT108-600E
AC Thyristor power switch
003aac815
0
25
50
75
100
125
Tj (°C)
A = dIcom/dt at condition Tj °C
B = dIcom/dt at condition Tj [125] °C
VD = 400 V
Fig. 10. Normalized critical rate of rise of commutating
current as a function of junction temperature
1.2
0
10- 1
1
10
102
B (V/µs)
A [B] = dIcom/dt at condition B, dVcom/dt
A [spec] is the data sheet value for dIcom/dt
turn-off time is less than 20 ms
Fig. 11. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
003aac817
VCL
VCL(25°C)
0.8
0.4
0
- 50
0
50
100
150
Tj (°C)
Fig. 12. Normalized clamping voltage (upper limit) as a function of junction temperature; minimum values
ACT108-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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