KSA1015GRTA Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSA1015GRTA Datasheet PDF : 6 Pages
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September 2015
KSA1015
PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier
• Collector-Base Voltage: VCBO = -50 V
• Complement to KSC1815
Ordering Information
Part Number
KSA1015GRTA
KSA1015YTA
Marking
A1015
A1015
123
Straight Lead
Bulk Packing
TO-92
1. Emitter
12
3
2. Collector
3. Base
Bent Lead
Tape & Reel
Ammo Packing
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
IB
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Junction Temperature
Storage Temperature Range
-50
V
-50
V
-5
V
-150
mA
-50
mA
150
°C
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.9
1
www.fairchildsemi.com
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