HM28S Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
Номер в каталоге
Компоненты Описание
производитель
HM28S Datasheet PDF : 3 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6450
Issued Date : 1992.11.25
Revised Date : 2002.04.18
Page No. : 1/3
HM28S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
Features
• Excellent hFE Linearity
• High DC Current Gain
• High Power Dissipation
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................. 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage ................................................................................................. 20 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ..................................................................................................................... 1.25 A
IB Base Current ............................................................................................................................. 0.4 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE1
290
-
*hFE2
300
-
hFE3
300
-
hFE4
300
-
fT
100
-
Cob
-
9
Classification of hFE2
Max.
-
-
-
100
100
0.55
-
1000
-
-
-
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
IC=600mA, IB=20mA
VCE=1V, IC=1mA
VCE=1V, IC=0.1A
VCE=1V, IC=0.3A
VCE=1V, IC=0.5A
VCE=10V, IC=50mA, f=1MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
300-550
C
500-700
D
650-1000
HM28S
HSMC Product Specification
Share Link: 