ES1M Просмотр технического описания (PDF) - LiteOn Technology
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ES1M Datasheet PDF : 2 Pages
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LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SUPER FAST RECTIFIERS
ES1J thru ES1M
REVERSE VOLTAGE - 600 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Glass passivated chip
SMA
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
A
B
C
DIM.
A
B
C
SMA
MIN.
4.06
2.29
1.27
MAX.
4.57
2.92
1.63
D
0.15 0.31
E
4.83 5.59
G
F
0.05 0.20
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
H
F
D
E
G
2.01 2.62
H
0.76 1.52
All Dimensions in millimeter
AR Y MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
IN For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
IM Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TL =110 C
L Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
E Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
R Maximum Reverse Recovery Time (Note 1)
TRR
P Typical Junction Capacitance (Note 2)
CJ
ES1J
600
420
600
1.3
35
ES1K
800
560
800
1.0
30
1.5
5
200
10
ES1M
1000
700
1000
1.7
50
UNIT
V
V
V
A
A
V
uA
ns
pF
Typical Thermal Resistance (Note 3)
R0JL
25
C/W
Operating Temperature Range
TJ
-55 to +150
C
Storage Temperature Range
TSTG
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
-55 to +150
C
REV. 1-PRE, 01-Dec-2000, KSGA03
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