HM6718 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HM6718 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9505-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM6718 is designed for general purpose medium power
amplifier and switching.
Features
• High power: 1W
• High current: 1A
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ............................................................................................................. 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
*hFE1
80
-
*hFE2
100
-
*hFE3
20
-
fT
50
-
Cob
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
Test Conditions
V
V
V
nA
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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