B857 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

B857

Emitter to base voltage5V 4A PNP epitaxial planar transistor

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6705

Issued Date : 1995.01.27

Revised Date : 2001.09.13

Page No. : 2/3

Current Gain & Collector Current

1000

10000

Saturation Voltage & Collector Current

hFE @ VCE=4V

100

10

1

1

10

100

1000

10000

Collector Current (mA)

1000

100

10

1

VBE(sat) @ IC=10IB

VBE(sat) @ IC=10IB

10

100

1000

Collector Current (mA)

10000

10000

On Voltage & Collector Current

1000

VBE(on) @ VCE=4V

10.00

Switching Time & Collector Current

VCC=30V, IC=10IB1= -10IB2

1.00

Tstg

Tf

0.10

Ton

100

1

10

100

1000

Collector Current (mA)

10000

Capacitance & Reverse-Biased Voltage

1000

100

10

0.1

HSB857

Cob

1

10

100

Reverse-Biased Voltage (V)

0.01

0.1

1.0

10.0

Collector Current (A)

100000

10000

1000

Safe Operating Area

PT=1ms

PT=100ms

PT=1s

100

10

1

1

10

100

Forward Voltage-VCE (V)

HSMC Product Specification

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