HSD882 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HSD882

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6004

Issued Date : 1998.03.15

Revised Date : 2002.01.25

Page No. : 2/4

Current Gain & Collector Current

1000

125oC

25oC

100

75oC

hFE @ VCE=2V

10

1

10

100

1000

Collector Current-IC (mA)

10000

Saturation Voltage & Collector Current

1000

100

10

1

75oC

25oC

125oC

VCE(sat) @ IC=10IB

10

100

1000

Collector Current-IC (mA)

10000

Saturation Voltage & Collector Current

1000

Saturation Voltage & Collector Current

1000

100

10

1

75oC

125oC

25oC

VCE(sat) @ IC=40IB

10

100

1000

Collector Current-IC (mA)

10000

10000

Saturation Voltage & Collector Current

100

10

1

75oC

125oC

25oC

VCE(sat) @ IC=20IB

10

100

1000

Collector Current-IC (mA)

10000

Capacitance & Reverse-Biased Voltage

100

1000

25oC

75oC

100

1

125oC

VBE(sat) @ IC=10IB

10

100

1000

Collector Current-IC (mA)

10000

HSD882

Cob

10

1

0.1

1

10

100

Reverse-Biased Voltage (V)

HSMC Product Specification

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