HI31C Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HI31C

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE9001

Issued Date : 1996.02.28

Revised Date : 2002.03.04

Page No. : 2/3

Current Gain & Collector Current

100

125oC

25oC

hFE @ VCE=4V

75oC

Saturation Voltage & Collector Current

1000

VCE(sat) @ IC=8IB

25oC

75oC

100

125oC

10

1

10

100

1000

Collector Current-IC (mA)

10000

10000

ON Voltage & Collector Current

VBE(ON) @ VCE=4V

10

1

10

100

1000

Collector Current-IC (mA)

10000

Switching Time & Collector Current

10.0

VCC=30V, IC=10IB1=-10IB2

1000

100

1

25oC

125oC

75oC

10

100

1000

Collector Current-IC (mA)

10000

Capacitance & Reverse-Biased Voltage

100

Cob

10

1

0.1

HI31C

1

10

100

Reverse-Biased Voltage (V)

1.0

0.1

0.1

Tst

Ton

Tf

1.0

10.0

Collector Current (mA)

100000

10000

1000

Safe Operating Area

PT=1ms

PT=100ms

PT=1s

100

10

1

1

10

100

Forward Voltage-VCE (V)

HSMC Product Specification

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