HI31C Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HI31C Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9001
Issued Date : 1996.02.28
Revised Date : 2002.03.04
Page No. : 1/3
HI31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current .............................................................................................................. 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
25
-
*hFE2
10
-
fT
3
-
Max.
-
-
20
50
1
1.2
1.8
-
50
-
Unit
Test Conditions
V
V
uA
uA
mA
V
V
MHz
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, VEB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI31C
HSMC Product Specification
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