HSB1109SD Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HSB1109SD

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6514

Issued Date : 1993.03.15

Revised Date : 2002.02.06

Page No. : 2/4

Current Gain & Collector Current

1000

Saturation Voltage & Collector Current

1000

125oC

25oC

100

75oC

10

1

hFE @ VCE=5V

10

100

Collector Current-IC (mA)

100

10

0.1

125oC

75oC

25oC

VCE(sat) @ IC=10IB

1

10

100

Collector Current-IC (mA)

ON Voltage & Collector Current

1000

25oC

125oC

75oC

100

0.1

VBE(ON) @ VCE=5V

1

10

100

Collector Current-IC (mA)

Cutoff Frequency & Collector Current

1000

20

15

10

5

0

0.1

1000

Output Capacitance &

Reverse-Blased Voltage

1

10

100

Reverse-Biased-VCB (V)

1000

Safe Operating Area

100

100

10

10

1

0.1

HSB1109S

1

10

100

Collector Current-IC (mA)

1000

1

1

10

100

1000

Forward Biased Voltage (V)

HSMC Product Specification

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