HI649A Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HI649A Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HI649A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI649A is designed for low frequency power amplifier.
Spec. No. : HE9003
Issued Date : 1998.01.25
Revised Date : 2002.04.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current........................................................................................................... -1.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-180
-
BVCEO
-160
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
27
Classification Of hFE1
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-1mA
IC=-10mA
IE=-1mA
VCB=-160V
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V,f=1MHz,IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
HI649A
HSMC Product Specification
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