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USBDFXXW5(2000) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
USBDFXXW5
(Rev.:2000)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
USBDFXXW5 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
USBDFxxW5
EMI FILTERING
Current FCC regulations requires that class B computing devices meet specified maximum levels for both
ratiated and conducted EMI.
- Radiated EMI covers the frequency range from 30MHz to 1GHz.
- Conducted EMI covers the 450kHz to 30MHz range.
For the types of devices utilizing the USB the most difficult test to pass is usually the radiated EMI test. For
this reason the USBDF device is aiming to minimize radiated EMI.
The differential signal (D+ and D-) of the USB does not contribute significantly to radiated or conducted
EMI because the magnetic field of the two conductors exactly cancels each other.
The inside of the PC environment is very noisy and designers must minimise noise coupling from the differ-
ent sources. D+ and D- must not be routed near high speed lines (clocks...).
Induced common mode noise can be minimised by running pairs of USB signals parallel to each other and
running grounded guard trace on each side of the signal pair from the USB controller to the USBDF device.
If possible, locate the USBDF device physically near the USB connectors. Distance between the USB con-
troller and the USB connector must be minimized.
The 47pF (Ct) capacitors are used to bypass high frequency energy to ground and for edge control, and
must be placed between the USB Controller and the series termination resistors (Rt). Both Ct and Rt
should be placed as close to the USB Controller as practicable.
The USBDFxxW5 ensure a filtering protection against ElectroMagnetic and RadioFrequency Interferences
thanks to its low-pass filter structure. This filter is characterized by the following parameters :
- cut-off frequency
- Insertion loss
- high frequency rejection
Fig. A3 shows the attenuation curve for frequencies up to 3GHz.
Fig. A2: Measurement configuration
Fig. A3: USBDFxxW5 attenuation curve.
Insertion loss (dB)
0
50 TG OUT
Vg
TEST BOARD
RF IN
50
-10
-20
-30
1
10
100
F (MHz)
1000 3000
ESD PROTECTION
In addition to the requirements of termination and EMC compatibility, computing devices are required to be
tested for ESD susceptibility. This test is described in the IEC 61000-4-2 and is already in place in Europe.
This test requires that a device tolerates ESD events and remain operational without user intervention.
The USBDFxxW5 is particularly optimized to perform ESD protection. ESD protection is based on the use
of device which clamps at :
Vinput = VBR + Rd.IPP
This protection function is splitted in 2 stages. As shown in figure A4, the ESD strikes are clamped by the
first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor R.
Such a configuration makes the output voltage very low at the Vout level.
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