3N259 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

3N259

MINIATURE INTEGRAL DIODE ASSEMBLIES

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

MDA200 series

(3N253 thru

3N259)

, Una.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

MINIATURE INTEGRAL DIODE ASSEMBLIES

. . . with silicon rectifier chips interconnected anil encapsulated into

voidless rectifier bridge circuits.

• High Resistance to Shock and Vibration

• High Dielectric Strength

• Built-in Printed Circuit Board Stand-Offs

• UL Recognized

= 60"C/W

SINGLE-PHASE

FULL-WAVE BRIDGE

2.0 AMPERES

50-1000 VOLTS

MAXIMUM RATINGS

Rating (Per Diod.)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

DC Output Voltage

Resistive Load

Capacitive Load

Sine Wave RMS Input Voltage

Average Rectified Forward

Current

resistive load, 60 Hz.

TA = 55°C)

o

si a*si zn! i55 Symbol

f)O

83

ZO

"5

zo

ns

£nas

-aS^

*S

2O

"S

VRRM

VRWM 50 100 200 400 600 BOO 1000

VR _,

Vdc

Vdc

VRIRMSI

32 64 127 255 382 510 640

50 100 200 400 600 800 1000

35 70 140 280 420 560 700

'o

Unit

Volts

Volts

Volts

Volts

Non-Repetitive Peak Surge

Current (Preceded and

followed by rated current

and voltage, TA = B5°CI

'FSM -•

60 (for 1cycle

»-. Amp

Operating and Storage Junction

Temperature Range

TJ-Tstg

-••

66 to +165

•— °c

ELECTRICAL CHARACTERISTICS

Chariot if istic

Instantaneous Forward Voltage (Per Diode)

(if ' 3.14 Amp, Tj-25°CI

Reverse Current {Per Diode)

(Rated V R , T A - 25°CI

Symbol TVP

Mix

Unit

"f

1.0

1.1

Volts

'R

MA

-

10

MECHANICAL CHARACTERISTICS

CASE: Train!»r MolO.ll Pl«tlc

POLARITY: Terminal designation on case

.j Pin 1 (+| for DC output

1 Pin 4 H for DC output

|Pins^2 and 3 (AC) for AC input

IvBUNTING POSITION: Any

WEIGHT: 1.8 gc.mt (.pproxl

TERMINALS: Readily solderable

connections, corrosion resistant.

MILLIMETERS INC M£S

DIM MIN MAX MIN MAX

A 1459 Ib49 0590 0.610

B

C

4.57 5.08

_ 70.57

o.-ieo

0200

0.810

D

0.76 1.02 0.030 0.040

F

102 U» 0040 0.050

C

3.68 3.94 ^.145 O.I5S

J

056 uML O.D22 0.028

K

_

9.02

_ 0355

L

1.78 2.03 0.070 0.080

N

2.54 2.!9 0.100 0.110

n

9.40 1003 0.370 0395

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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