K2788 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

K2788

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2788

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A)

• Low drive current

• High speed switching

• 4V gate drive devices.

Outline

UPAK

21

3

D

4

G

S

1. Gate

2. Drain

3. Source

4. Drain

ADE-208-538

1st. Edition

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