2SJ546 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ546 Datasheet PDF : 8 Pages
| |||
2SJ546
Static Drain to Source on State Resistance
vs. Temperature
0.40
Pulse Test
0.32
0.24
0.16
–5 A
–10 A
ID = –15 A
VGS = –4 V
0.08
0
–40
–5 A, –10 A, –15 A
–10 V
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
Pulse Test
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VGS
VDS VDD = –50 V
–60
–25 V
–10 V
–80
ID = –15 A
–100
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
25°C
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = –10 V, VDD = –30 V
500 PW = 5 µs, duty ≤ 1 %
200
td(off)
100
tf
50
tr
20
10
–0.1 –0.2 –0.5 –1 –2
td(on)
–5 –10 –20
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
Share Link: 