2SJ506S Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

2SJ506S

Silicon P Channel MOS FET High Speed Power Switching

KEXIN Industrial 

SMD Type

2SJ506S

Electrical Characteristics Ta = 25

Parameter

Drain to source breakdown voltage

Gate to source breakdown voltage

Drain cut-off current

Gate leakage current

Gate to source cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

Testconditons

VDSS ID=-10mA,VGS=0

VGSS IG= 100 A ,VDS=0

IDSS VDS=-30V,VGS=0

IGSS VGS= 16V,VDS=0

VGS(off) VDS=-10V,ID=-1mA

Yfs VDS=-10V,ID=-5A

VGS=-10V,ID=-5A

RDS(on)

VGS=-4.0V,ID=-5A

Ciss

Coss VDS=-10V,VGS=0,f=1MHZ

Crss

td(on)

tr

td(off)

VGS(on)=-10V,ID=--5A ,RL=2

tf

MOSFICET

Min Typ Max Unit

-30

V

20

V

-10

A

10 A

-1.0

-2.0 V

10 16

S

65 65 m

110 180 m

660

pF

440

pF

140

pF

12

ns

65

ns

85

ns

65

ns

2 www.kexin.com.cn

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