2SJ506S Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

2SJ506S

Silicon P Channel MOS FET High Speed Power Switching

KEXIN Industrial 

SMD Type

Hight Speed Power Switching

2SJ506S

MOSFICET

Features

Low on-resistance

RDS(on) = 0.065 typ. (at VGS = -10V, ID = -5A)

Low drive current

High speed switching

4V gate drive devices.

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage (AC)

Gate to source voltage (DC) *1

Drain current (DC)

Drain current(pulse) *2

Power dissipation

TA=25

TC=25

Channel temperature

Storage temperature

Channel to Case

Channel to Ambient

*1 f = 20 kHz, Duty Cycle 10% (+Side)

* 2 PW 10 s; d 1%.

Symbol

VDSS

VGSS

VGSS

ID

ID

PD

PD

Tch

Tstg

Rth(ch-C)

Rth(ch-A)

Rating

-60

20

-20

20

80

1.5

70

150

-55 to +150

1.79

83.3

Unit

V

V

V

A

A

W

W

/W

/W

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