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2SH26 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SH26
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
2SH26 Datasheet PDF : 10 Pages
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2SH26
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 2.5 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Ic Monitor
Vin Monitor
V
CE
Monitor
Rg
D.U.T.
Vin ± 15 V
R
L
V
CC
0
Vin
Waveform
10%
90%
V
CE
90%
td(on)
10%
tr
ton
90%
Ic
10%
td(off)
tf
toff
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