2SD958 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD958 Datasheet PDF : 3 Pages
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Transistors
2SD0958 (2SD958)
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SB0788 (2SB788)
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
120
V
Collector-emitter voltage (Base open) VCEO
120
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
120
V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
120
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
Collector-base cut-off current (Emitter open) ICBO VCB = 50 V, IE = 0
100 nA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
1
µA
Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180
700
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
0.6
V
Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
Noise voltage
NV VCE = 40 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00199BED
1
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