D5702 Просмотр технического описания (PDF) - Inchange Semiconductor
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D5702 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
VF
Diode forward voltage
tf
Fall time
IF=6A
IC=4A ;IB1=0.8A;IB2=-1.6A
VCC=200V; RL=50Ω
Product Specification
2SD5702
MIN TYP. MAX UNIT
2.0 5.0
V
1.5
V
10 μA
40
200 mA
10
30
5
15
3
MHz
2.0
V
0.4 μs
2
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