2SD1802 Просмотр технического описания (PDF) - Weitron Technology
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2SD1802 Datasheet PDF : 4 Pages
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NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
2SD1802
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
Limits
Unit
60
V
50
V
6.0
V
3.0
µA
1.0
W
-55 to +150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=10µA
Collector-Emitter Breakdown Voltage
IC=1.0mA
Emitter-Base Breakdown Voltage
IE=10µA
Collector Cutoff Current
VCB=40V
Collector Cutoff Current
VEB =4.0V
Symbol
Min
BVCBO
60
BVCEO
50
BVEBO
6.0
ICBO
-
IEBO
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
1.0
µA
-
1.0
µA
WEITRON
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http://www.weitron.com.tw
14-Jul-06
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